features 1 of 6 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . rf mems spa1118z 850mhz 1watt power amplifier with active bias rfmd?s spa1118z is a high efficiency gaas heterojunction bipolar tran- sistor (hbt) amplifier housed in a low-cost surface-mountable plastic package. these hbt amplifiers are fa bricated using molecular beam epi- taxial growth technology which produc es reliable and consistent perfor- mance from wafer to wafer and lot to lot. this product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850mhz band. its high linearity makes it an ideal choice for wireless data and digital applications. vcc vbias rfin n/c rfout/ vcc active bias input match n/c n/c n/c ? high linearity performance ? +21dbm is-95 channel power at -55dbc acp ? +48dbm oip3 typ. ? on-chip active bias control ? patented high reliability gaas hbt technology ? surface-mountable plastic package applications ? multi-carrier applications ? amps, ism applications ds121024 ? package: exposed pad soic-8 spa1118z 850mhz 1watt power amplifier with active bias parameter specification unit condition min. typ. max. frequency of operation 810 960 mhz output power at 1db compression 29.5 dbm adjacent channel power -57.0 -54.0 dbc is-95 at 880mhz, 885 khz, p out =21dbm small signal gain 16.2 17.2 18.2 db 880mhz input vswr 1.5:1 output third order intercept point 48.0 dbm power out per tone=+14dbm noise figure 7.5 db device current 275 310 330 ma device voltage 4.75 5.0 5.25 v thermal resistance (junction-lead) 35 c/w t l =85c test conditions: z 0 =50 ? v cc =5v temp=25c
2 of 6 ds121024 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . spa1118z 850mhz to 950mhz application circuit data, i cc =320ma, v cc =5v absolute maximum ratings parameter rating unit max supply current (i cc ) at v cc typ. 750 ma max device voltage (v cc ) at i cc typ. 6.0 v max rf input power 24 dbm max junction temp (t j )+160c max storage temp +150 c moisture sensitivity level 3 msl operation of this device beyond any one of these limits may cause permanent dam- age. for reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. bias conditions should also satisfy the following expression: i d v d <(t j -t l )/r th , j-l caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. ex tended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. rfmd green: rohs compliant per eu directive 2002/95/ec, halogen free per iec 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a fl ame retardant, and <2% antimony in solder. 20 22 24 26 28 30 32 0.85 0.87 0.89 0.91 0.93 0.95 25c 85c -40c 10 12 14 16 18 20 22 0.85 0.87 0.89 0.91 0.93 0.95 25c 85c -40c -40 -35 -30 -25 -20 -15 -10 -5 0 0.85 0.87 0.89 0.91 0.93 0.95 s11 s12 s22 -75 -70 -65 -60 -55 -50 -45 17 18 19 20 21 22 23 24 -40c 85c 25c p1db vs. frequency ghz dbm is-95 @ 880 mhz adj. channel pwr. vs. channel output pwr. dbm dbc ghz gain vs. frequency db input/output return loss, isolation vs. frequency, t=25 c ghz db 0 50 100 150 200 250 300 350 400 450 012345 25c -40c 85c device current vs. source voltage v cc (v) device current (ma)
3 of 6 ds121024 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . spa1118z recommended land pattern branding diagram pin function description 1vcc supply voltage for the active bias network. bypassing in the appropriate location as shown on the application schematic is required for optimum rf performance. 2vbias bias control pin for the active bias network. device current is set by the current into this pin. recommended configura- tion is shown in the application schematic. bypassing in th e appropriate location as shown on the application schematic is required for optimum rf performance. 3rf in rf input pin. this pin requires the use of an external dc-blocking capacitor chosen for the frequency of operation. 4, 5 nc no connection. 6rf out/vcc rf output and bias pin. bias should be supplied to this pin through an external rf choke. because dc biasing is present on this pin a dc-blocking capacitor should be used in most applications. the supply side of the bias network should be well bypassed. an output matching network is necessary for optimum performance. 7, 8 nc no connection. epad gnd exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for thermal and rf performance. several vias should be located under the epad as shown in the recommended land pattern. note: dimensions are in inches [mm] 0.020 [0.51] 0.140 [3.56] 0.080 [2.03] 0.050 [1.27] 0.150 [3.81] 0.300 [7.62] plated-thru holes (0.015" dia, 0.030" pitch) machine screws
4 of 6 ds121024 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . spa1118z package drawing dimensions in inches (millimeters) refer to drawing posted at www.rfmd.com for tolerances.
5 of 6 ds121024 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . spa1118z 850mhz to 950mhz application schematic evaluation board layout ref. des. value part number c1, c6 22pf, 5% rohm mch18 series c2 10uf, 10% avx tajb 106k020r c3 1000pf, 5% rohm mch18 series c4 43pf, 5% rohm mch18 series c5 5.6pf, 0.5pf rohm mch18 series l1 100 nh, 5% coilcraft 1008hq series r1 392 ? , 1% rohm mcr03 series vcc 5.6 pf 100 nh 43pf 10uf, tantalum 22pf 22pf z=50 , 17 1 2 3 4 8 7 6 5 1000pf 392 vpc vcc soic-8 pa ecb-101161 rev. c eval board c5 l1 c4 c3 c2 c1 c6 r1 note: pins 4, 5, 7, 8 are not connected internally sirenza microdevices
6 of 6 ds121024 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . spa1118z ordering information ordering code description spa1118z 7? reel with 500 pieces spa1118zsq sample bag with 25 pieces spa1118zsr 7? reel with 100 pieces SPA1118Z-EVB1 850mhz to 950mhz pcba with 5-piece sample bag
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